Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1

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£392.00

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£470.00

(inc. VAT)

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RS Stock No.:
911-4808
Mfr. Part No.:
BSP149H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

660 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

3.5mm

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.6mm

COO (Country of Origin):
MY

Infineon SIPMOS® N-Channel MOSFETs


Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1


This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.

Features & Benefits


• Maximum drain-source voltage of 200V for high voltage applications
• Continuous drain current capability of up to 660mA
• Utilises SIPMOS technology for consistent performance
• RoHS compliant with Pb-free lead plating
• dv/dt rated for improved resilience against voltage variations

Applications


• Driver in automation systems
• Switching power supplies for energy management
• Automotive electronics compliant with AEC-Q101 standards

What is the significance of the depletion mode characteristic?


The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.

How does the device manage thermal challenges?


It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.

What are the gate threshold voltage values for this component?


The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.

What are the implications of the ESD Class rating?


The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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