Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223

RS Stock No.:: 911-4808
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223

Subtotal (1 reel of 1000 units)*

£319.00

(exc. VAT)

£383.00

(inc. VAT)

Add 1000 units to get free delivery

Orders below £50.00 (exc. VAT) cost £6.95.

In Stock

1,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£0.319	£319.00

*price indicative

RS Stock No.:: 911-4808
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	660mA
	Maximum Drain Source Voltage Vds	200V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Width	3.5 mm
	Standards/Approvals	No
	Length	6.5mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 660mA
	Maximum Drain Source Voltage Vds 200V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Width 3.5 mm
	Standards/Approvals No
	Length 6.5mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: MY

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1

This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.

Features & Benefits

• Maximum drain-source voltage of 200V for high voltage applications

• Continuous drain current capability of up to 660mA

• Utilises SIPMOS technology for consistent performance

• RoHS compliant with Pb-free lead plating

• dv/dt rated for improved resilience against voltage variations

Applications

• Driver in automation systems

• Switching power supplies for energy management

• Automotive electronics compliant with AEC-Q101 standards

What is the significance of the depletion mode characteristic?

The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.

How does the device manage thermal challenges?

It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.

What are the gate threshold voltage values for this component?

The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.

What are the implications of the ESD Class rating?

The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.