Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1

RS Stock No.:: 911-4808
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1

Subtotal (1 reel of 1000 units)*

£392.00

(exc. VAT)

£470.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£0.392	£392.00

*price indicative

RS Stock No.:: 911-4808
Mfr. Part No.:: BSP149H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	660 mA
	Maximum Drain Source Voltage	200 V
	Series	SIPMOS®
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	1.8 Ω
	Channel Mode	Depletion
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	6.5mm
	Width	3.5mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	11 nC @ 5 V
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.6mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 660 mA
	Maximum Drain Source Voltage 200 V
	Series SIPMOS®
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 1.8 Ω
	Channel Mode Depletion
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 6.5mm
	Width 3.5mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 11 nC @ 5 V
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.6mm

COO (Country of Origin):: MY

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1

This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.

Features & Benefits

• Maximum drain-source voltage of 200V for high voltage applications
• Continuous drain current capability of up to 660mA
• Utilises SIPMOS technology for consistent performance
• RoHS compliant with Pb-free lead plating
• dv/dt rated for improved resilience against voltage variations

Applications

• Driver in automation systems
• Switching power supplies for energy management
• Automotive electronics compliant with AEC-Q101 standards

What is the significance of the depletion mode characteristic?

The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.

How does the device manage thermal challenges?

It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.

What are the gate threshold voltage values for this component?

The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.

What are the implications of the ESD Class rating?

The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.