Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V, 3-Pin SOT-223 BSP297H6327XTSA1

RS Stock No.:: 911-0929
Mfr. Part No.:: BSP297H6327XTSA1
Brand:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V, 3-Pin SOT-223 BSP297H6327XTSA1

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Subtotal (1 reel of 1000 units)*

£272.00

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£326.00

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Shipping from 27 February 2026

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Units	Per unit	Per Reel*
1000 - 1000	£0.272	£272.00
2000 - 2000	£0.258	£258.00
3000 +	£0.242	£242.00

*price indicative

RS Stock No.:: 911-0929
Mfr. Part No.:: BSP297H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	660 mA
	Maximum Drain Source Voltage	200 V
	Series	SIPMOS®
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	1.8 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.8V
	Minimum Gate Threshold Voltage	0.8V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	3.5mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	12.9 nC @ 10 V
	Transistor Material	Si
	Length	6.5mm
	Minimum Operating Temperature	-55 °C
	Height	1.6mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 660 mA
	Maximum Drain Source Voltage 200 V
	Series SIPMOS®
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 1.8 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.8V
	Minimum Gate Threshold Voltage 0.8V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 3.5mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 12.9 nC @ 10 V
	Transistor Material Si
	Length 6.5mm
	Minimum Operating Temperature -55 °C
	Height 1.6mm

COO (Country of Origin):: CN

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1

This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits

• N-channel configuration improves switching efficiency
• Low gate threshold voltage ensures compatibility with logic levels
• High voltage ratings accommodate a range of applications
• Enhanced power dissipation capabilities support effective thermal management
• AEC-Q101 qualification adheres to automotive industry standards
• Compact SOT-223 package supports space-efficient designs

Applications

• Utilised for motor control in automotive systems
• Applied in power management for consumer electronics
• Used in battery management systems for energy regulation
• Employed in signal amplification within communication devices
• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?

The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?

Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?

It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?

Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.