Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1

RS Stock No.:: 445-2281
Mfr. Part No.:: BSP89H6327XTSA1
Brand:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1

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Subtotal (1 pack of 5 units)*

£1.69

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£2.03

(inc. VAT)

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In Stock

435 unit(s) ready to ship
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Units	Per unit	Per Pack*
5 - 45	£0.338	£1.69
50 - 245	£0.312	£1.56
250 - 495	£0.29	£1.45
500 - 1245	£0.27	£1.35
1250 +	£0.25	£1.25

*price indicative

RS Stock No.:: 445-2281
Mfr. Part No.:: BSP89H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	240V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	4.3nC
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.5mm
	Width	3.5 mm
	Height	1.6mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 240V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 4.3nC
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.5mm
	Width 3.5 mm
	Height 1.6mm
	Automotive Standard AEC-Q101

Non Compliant

Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1

This MOSFET is a key component for high-voltage electronic applications, providing effective switching capabilities. Utilising N-channel enhancement mode technology, it is suitable for automotive and industrial electronics, ensuring efficient operation in various conditions. The SOT-223 package enables versatile surface mounting, making it appropriate for contemporary circuit designs.

Features & Benefits

• Maximum continuous drain current of 350mA

• High drain-source voltage rating of 240V for enhanced safety

• Low gate threshold voltage improves sensitivity

• Power dissipation capability of up to 1.8W

• Ideal for logic-level applications with quick switching times

Applications

• Power management in automotive electronics

• MOSFET-based switching power supplies

• Signal amplification in electronic circuits

What is the maximum temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How does the gate threshold voltage affect performance?

A low gate threshold voltage allows the MOSFET to activate at lower input voltages, enhancing efficiency in battery-operated devices.

What type of mounting is compatible with this device?

This component is designed for surface mounting in a SOT-223 package, facilitating easy integration into PCBs.

Can it handle pulsed drain currents?

Yes, it can manage pulsed drain currents of up to 1.4A, offering additional flexibility for burst power applications.

Is it suitable for use with microcontrollers?

Yes, its logic-level compatibility allows for direct interfacing with microcontroller outputs for effective control.

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Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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