Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- RS Stock No.:
- 445-2281
- Mfr. Part No.:
- BSP89H6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£1.69
(exc. VAT)
£2.03
(inc. VAT)
Add 165 units to get free delivery
- 435 unit(s) ready to ship
- Plus 920 unit(s) shipping from 13 February 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.338 | £1.69 |
| 50 - 245 | £0.312 | £1.56 |
| 250 - 495 | £0.29 | £1.45 |
| 500 - 1245 | £0.27 | £1.35 |
| 1250 + | £0.25 | £1.25 |
*price indicative
- RS Stock No.:
- 445-2281
- Mfr. Part No.:
- BSP89H6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Width | 3.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Width 3.5 mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
Infineon SIPMOS® Series MOSFET, 350 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP89H6327XTSA1
Features & Benefits
Applications
What is the maximum temperature range for operation?
How does the gate threshold voltage affect performance?
What type of mounting is compatible with this device?
Can it handle pulsed drain currents?
Is it suitable for use with microcontrollers?
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