Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V, 3-Pin SOT-223 BSP89H6327XTSA1
- RS Stock No.:
- 445-2281
- Mfr. Part No.:
- BSP89H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£1.69
(exc. VAT)
£2.03
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 445 unit(s) ready to ship
- Plus 920 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.338 | £1.69 |
| 50 - 245 | £0.312 | £1.56 |
| 250 - 495 | £0.29 | £1.45 |
| 500 - 1245 | £0.27 | £1.35 |
| 1250 + | £0.25 | £1.25 |
*price indicative
- RS Stock No.:
- 445-2281
- Mfr. Part No.:
- BSP89H6327XTSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 350 mA | |
| Maximum Drain Source Voltage | 240 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.3 nC @ 10 V | |
| Width | 3.5mm | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.6mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 350 mA | ||
Maximum Drain Source Voltage 240 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.3 nC @ 10 V | ||
Width 3.5mm | ||
Transistor Material Si | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
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