Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V, 3-Pin SOT-223 BSP89H6327XTSA1

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£1.69

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£2.03

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500 - 1245£0.27£1.35
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Packaging Options:
RS Stock No.:
445-2281
Mfr. Part No.:
BSP89H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

240 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.5mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.6mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Non Compliant

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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