Infineon SIPMOS® N-Channel MOSFET, 1.7 A, 100 V, 3-Pin SOT-223 BSP373NH6327XTSA1

Subtotal (1 reel of 1000 units)*

£280.00

(exc. VAT)

£340.00

(inc. VAT)

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1000 +£0.28£280.00

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RS Stock No.:
165-7514
Mfr. Part No.:
BSP373NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Maximum Operating Temperature

+150 °C

Length

6.5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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