Infineon SIPMOS Type N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223

RS Stock No.:: 911-4827
Mfr. Part No.:: BSP295H6327XTSA1
Brand:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 1.8 A, 60 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

£262.00

(exc. VAT)

£314.00

(inc. VAT)

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In Stock

Plus 5,000 unit(s) shipping from 19 January 2026

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Units	Per unit	Per Reel*
1000 - 1000	£0.262	£262.00
2000 - 2000	£0.249	£249.00
3000 +	£0.233	£233.00

*price indicative

RS Stock No.:: 911-4827
Mfr. Part No.:: BSP295H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14nC
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.5mm
	Width	3.5 mm
	Height	1.6mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14nC
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.5mm
	Width 3.5 mm
	Height 1.6mm
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1

This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.

Features & Benefits

• Continuously handles a drain current of 1.8A

• Low maximum drain-source resistance of 300mΩ

• Wide gate-source voltage range from -20V to +20V

• Qualified to AEC-Q101 automotive standard for reliability

Applications

• Power management systems for efficient output control

• Motor drives for reliable switching operations

• Signal amplification in various electronic devices

• Automotive electronic control units

What is the typical power dissipation of the component?

It can dissipate up to 1.8W under specified conditions for effective heat management during operation.

How does the gate threshold voltage affect performance?

The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.

Can this component handle pulsed drain currents?

Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.

What packaging options are available?

The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.

Is the device compliant with environmental standards?

It features Pb-free lead plating and adheres to RoHS compliance, meeting contemporary environmental regulations.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

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