Infineon SIPMOS® N-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 BSP318SH6327XTSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.6mm