Infineon SIPMOS® N-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 BSP318SH6327XTSA1

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
911-4978
Mfr. Part No.:
BSP318SH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

3.5mm

Transistor Material

Si

Height

1.6mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MY

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links