Infineon SIPMOS® N-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 BSP318SH6327XTSA1
- RS Stock No.:
- 753-2816
- Mfr. Part No.:
- BSP318SH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£5.58
(exc. VAT)
£6.70
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 310 left, ready to ship
- Plus 30 left, ready to ship from another location
- Final 840 unit(s) shipping from 30 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.558 | £5.58 |
| 100 - 240 | £0.53 | £5.30 |
| 250 - 490 | £0.508 | £5.08 |
| 500 - 990 | £0.485 | £4.85 |
| 1000 + | £0.452 | £4.52 |
*price indicative
- RS Stock No.:
- 753-2816
- Mfr. Part No.:
- BSP318SH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Width | 3.5mm | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.6mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Width 3.5mm | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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