Infineon SIPMOS® N-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 BSP318SH6327XTSA1

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Subtotal (1 pack of 10 units)*

£5.58

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£6.70

(inc. VAT)

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10 - 90£0.558£5.58
100 - 240£0.53£5.30
250 - 490£0.508£5.08
500 - 990£0.485£4.85
1000 +£0.452£4.52

*price indicative

Packaging Options:
RS Stock No.:
753-2816
Mfr. Part No.:
BSP318SH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Length

6.5mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.6mm

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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