Infineon SIPMOS® N-Channel MOSFET, 170 mA, 400 V, 3-Pin SOT-223 BSP324H6327XTSA1

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£210.00

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£250.00

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2000 - 2000£0.20£200.00
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RS Stock No.:
165-5810
Mfr. Part No.:
BSP324H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

400 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

25 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Number of Elements per Chip

1

Length

6.5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

4.54 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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