Infineon SIPMOS® N-Channel MOSFET, 170 mA, 400 V, 3-Pin SOT-223 BSP324H6327XTSA1
- RS Stock No.:
- 165-5810
- Mfr. Part No.:
- BSP324H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 1000 units)*
£210.00
(exc. VAT)
£250.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | £0.21 | £210.00 |
| 2000 - 2000 | £0.20 | £200.00 |
| 3000 + | £0.187 | £187.00 |
*price indicative
- RS Stock No.:
- 165-5810
- Mfr. Part No.:
- BSP324H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 mA | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.5mm | |
| Typical Gate Charge @ Vgs | 4.54 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 170 mA | ||
Maximum Drain Source Voltage 400 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.5mm | ||
Typical Gate Charge @ Vgs 4.54 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.5mm | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS® N-Channel MOSFET 400 V, 3-Pin SOT-223 BSP324H6327XTSA1
- Microchip DN2540 N-Channel MOSFET 400 V Depletion, 3-Pin TO-243AA DN2540N8-G
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123
- Diodes Inc N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123TA
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-23 BSS84PH6327XTSA2
- onsemi N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123LT1G
- Diodes Inc N-Channel MOSFET 100 V, 3-Pin SOT-23 BSS123-7-F
- Diodes Inc N-Channel MOSFET 100 V, 3-Pin SOT-323 BSS123W-7-F