Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1

RS Stock No.:: 445-2269
Mfr. Part No.:: BSP295H6327XTSA1
Brand:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1

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Subtotal (1 pack of 5 units)*

£3.20

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£3.85

(inc. VAT)

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In Stock

845 unit(s) ready to ship
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Plus 6,000 unit(s) shipping from 09 October 2025

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Units	Per unit	Per Pack*
5 - 45	£0.64	£3.20
50 - 120	£0.57	£2.85
125 - 245	£0.532	£2.66
250 - 495	£0.492	£2.46
500 +	£0.454	£2.27

*price indicative

RS Stock No.:: 445-2269
Mfr. Part No.:: BSP295H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	1.8 A
	Maximum Drain Source Voltage	60 V
	Series	SIPMOS®
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	300 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.8V
	Minimum Gate Threshold Voltage	0.8V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	14 nC @ 10 V
	Length	6.5mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	3.5mm
	Maximum Operating Temperature	+150 °C
	Automotive Standard	AEC-Q101
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	1.6mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 1.8 A
	Maximum Drain Source Voltage 60 V
	Series SIPMOS®
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 300 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.8V
	Minimum Gate Threshold Voltage 0.8V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 14 nC @ 10 V
	Length 6.5mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 3.5mm
	Maximum Operating Temperature +150 °C
	Automotive Standard AEC-Q101
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 1.6mm

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1

This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.

Features & Benefits

• Continuously handles a drain current of 1.8A
• Low maximum drain-source resistance of 300mΩ
• Wide gate-source voltage range from -20V to +20V
• Qualified to AEC-Q101 automotive standard for reliability

Applications

• Power management systems for efficient output control
• Motor drives for reliable switching operations
• Signal amplification in various electronic devices
• Automotive electronic control units

What is the typical power dissipation of the component?

It can dissipate up to 1.8W under specified conditions for effective heat management during operation.

How does the gate threshold voltage affect performance?

The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.

Can this component handle pulsed drain currents?

Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.

What packaging options are available?

The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.