Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V, 3-Pin SOT-223 BSP125H6327XTSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

600 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.4 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Number of Elements per Chip

1

Transistor Material

Si

Width

3.5mm

Minimum Operating Temperature

-55 °C

Height

1.6mm