Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1

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£1.26

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Packaging Options:
RS Stock No.:
354-5708
Distrelec Article No.:
302-83-876
Mfr. Part No.:
BSP135H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.7 nC @ 5 V

Width

3.5mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Automotive Standard

AEC-Q101

Height

1.6mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

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