Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1
- RS Stock No.:
- 354-5720
- Distrelec Article No.:
- 302-83-878
- Mfr. Part No.:
- BSP149H6327XTSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£0.96
(exc. VAT)
£1.15
(inc. VAT)
FREE delivery for orders over £50.00
- 79 unit(s) ready to ship
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Units | Per unit |
---|---|
1 - 9 | £0.96 |
10 - 49 | £0.91 |
50 - 99 | £0.87 |
100 - 249 | £0.83 |
250 + | £0.78 |
*price indicative
- RS Stock No.:
- 354-5720
- Distrelec Article No.:
- 302-83-878
- Mfr. Part No.:
- BSP149H6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 660 mA | |
Maximum Drain Source Voltage | 200 V | |
Series | SIPMOS® | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.8 Ω | |
Channel Mode | Depletion | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 1.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 3.5mm | |
Typical Gate Charge @ Vgs | 11 nC @ 5 V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.5mm | |
Maximum Operating Temperature | +150 °C | |
Automotive Standard | AEC-Q101 | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 1.6mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 660 mA | ||
Maximum Drain Source Voltage 200 V | ||
Series SIPMOS® | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.5mm | ||
Typical Gate Charge @ Vgs 11 nC @ 5 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Maximum Operating Temperature +150 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
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