Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1
- RS Stock No.:
- 354-5720
- Distrelec Article No.:
- 302-83-878
- Mfr. Part No.:
- BSP149H6327XTSA1
- Brand:
- Infineon
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Units | Per unit |
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1 - 9 | £0.96 |
10 - 49 | £0.91 |
50 - 99 | £0.87 |
100 - 249 | £0.83 |
250 + | £0.78 |
*price indicative
- RS Stock No.:
- 354-5720
- Distrelec Article No.:
- 302-83-878
- Mfr. Part No.:
- BSP149H6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 660 mA | |
Maximum Drain Source Voltage | 200 V | |
Package Type | SOT-223 | |
Series | SIPMOS® | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.8 Ω | |
Channel Mode | Depletion | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 1.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 11 nC @ 5 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 3.5mm | |
Length | 6.5mm | |
Automotive Standard | AEC-Q101 | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Height | 1.6mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 660 mA | ||
Maximum Drain Source Voltage 200 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 11 nC @ 5 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 3.5mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.6mm | ||
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1
Features & Benefits
• Continuous drain current capability of up to 660mA
• Utilises SIPMOS technology for consistent performance
• RoHS compliant with Pb-free lead plating
• dv/dt rated for improved resilience against voltage variations
Applications
• Switching power supplies for energy management
• Automotive electronics compliant with AEC-Q101 standards
What is the significance of the depletion mode characteristic?
How does the device manage thermal challenges?
What are the gate threshold voltage values for this component?
What are the implications of the ESD Class rating?
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