Infineon SIPMOS® N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 BSP149H6327XTSA1

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£0.96

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£1.15

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Packaging Options:
RS Stock No.:
354-5720
Distrelec Article No.:
302-83-878
Mfr. Part No.:
BSP149H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

660 mA

Maximum Drain Source Voltage

200 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.6mm

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