Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- RS Stock No.:
- 911-4971
- Mfr. Part No.:
- BSS126H6327XTSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£336.00
(exc. VAT)
£402.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.112 | £336.00 |
| 6000 - 6000 | £0.106 | £318.00 |
| 9000 + | £0.10 | £300.00 |
*price indicative
- RS Stock No.:
- 911-4971
- Mfr. Part No.:
- BSS126H6327XTSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SOT-23 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 700 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 1.6V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 1.4 nC @ 5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SOT-23 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 700 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1.6V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 1.4 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 2.9mm | ||
Width 1.3mm | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- DE
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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