Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

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£336.00

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£402.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000£0.112£336.00
6000 - 6000£0.106£318.00
9000 +£0.10£300.00

*price indicative

RS Stock No.:
911-4971
Mfr. Part No.:
BSS126H6327XTSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

1.3mm

Height

1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
DE

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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