Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 BSS127H6327XTSA2
- RS Stock No.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£6.525
(exc. VAT)
£7.825
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,975 unit(s) shipping from 19 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.261 | £6.53 |
| 250 - 600 | £0.18 | £4.50 |
| 625 - 1225 | £0.167 | £4.18 |
| 1250 - 2475 | £0.157 | £3.93 |
| 2500 + | £0.118 | £2.95 |
*price indicative
- RS Stock No.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SOT-23 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.3mm | |
| Typical Gate Charge @ Vgs | 0.65 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SOT-23 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.3mm | ||
Typical Gate Charge @ Vgs 0.65 nC @ 10 V | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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