Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- RS Stock No.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£4.65
(exc. VAT)
£5.575
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 25 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.186 | £4.65 |
| 250 - 600 | £0.128 | £3.20 |
| 625 - 1225 | £0.119 | £2.98 |
| 1250 - 2475 | £0.112 | £2.80 |
| 2500 + | £0.084 | £2.10 |
*price indicative
- RS Stock No.:
- 753-2832
- Mfr. Part No.:
- BSS127H6327XTSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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