Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 BSS127H6327XTSA2

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Subtotal (1 pack of 25 units)*

£6.525

(exc. VAT)

£7.825

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225£0.261£6.53
250 - 600£0.18£4.50
625 - 1225£0.167£4.18
1250 - 2475£0.157£3.93
2500 +£0.118£2.95

*price indicative

Packaging Options:
RS Stock No.:
753-2832
Mfr. Part No.:
BSS127H6327XTSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 mA

Maximum Drain Source Voltage

600 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

0.65 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1mm

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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