Infineon SIPMOS® N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- RS Stock No.:
- 753-2841
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£5.475
(exc. VAT)
£6.575
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.219 | £5.475 |
| 125 - 475 | £0.112 | £2.80 |
| 500 - 1225 | £0.11 | £2.75 |
| 1250 + | £0.107 | £2.675 |
*price indicative
- RS Stock No.:
- 753-2841
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 230 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.4 nC @ 5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 230 mA | ||
Maximum Drain Source Voltage 60 V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.3mm | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.4 nC @ 5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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