N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 Infineon BSS159NH6327XTSA2
- RS Stock No.:
- 753-2841
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Brand:
- Infineon
Available to back order for despatch 11/02/2025
Added
Price Each (In a Pack of 25)
£0.18
(exc. VAT)
£0.22
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 100 | £0.18 | £4.50 |
| 125 - 475 | £0.092 | £2.30 |
| 500 - 1225 | £0.09 | £2.25 |
| 1250 + | £0.088 | £2.20 |
| *price indicative | ||
- RS Stock No.:
- 753-2841
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 230 mA |
| Maximum Drain Source Voltage | 60 V |
| Series | SIPMOS |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 2.4V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 360 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 2.9mm |
| Transistor Material | Si |
| Width | 1.3mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 1.4 nC @ 5 V |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 753-2841
- Mfr. Part No.:
- BSS159NH6327XTSA2
- Brand:
- Infineon