STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG
- RS Stock No.:
- 233-3039
- Mfr. Part No.:
- STB37N60DM2AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£5.30
(exc. VAT)
£6.36
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 970 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £5.30 |
| 5 - 9 | £5.04 |
| 10 - 24 | £4.54 |
| 25 - 49 | £4.09 |
| 50 + | £3.87 |
*price indicative
- RS Stock No.:
- 233-3039
- Mfr. Part No.:
- STB37N60DM2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB37N60 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 210W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB37N60 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 210W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Length 15.85mm | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Related links
- STMicroelectronics STB37N60 SiC N-Channel MOSFET 600 V, 3-Pin D2PAK STB37N60DM2AG
- STMicroelectronics STB37N60 SiC N-Channel MOSFET 1200 V, 3-Pin H2PAK-2 STH12N120K5-2
- Vishay EF Series N-Channel MOSFET 600 V, 3-Pin D2PAK SiHB28N60EF-GE3
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin D2PAK STB33N60DM6
- onsemi NTHL N-Channel MOSFET 600 V, 3-Pin TO-247 NTHL120N60S5Z
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-220FP STF35N60DM2
- IXYS HiperFET 28 A 3-Pin TO-3PN IXFQ28N60P3
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin TO-247 STW35N60DM2