STMicroelectronics MDmesh DM2 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP STF35N60DM2
- RS Stock No.:
- 111-6464
- Mfr. Part No.:
- STF35N60DM2
- Brand:
- STMicroelectronics
Subtotal (1 pack of 2 units)*
£5.20
(exc. VAT)
£6.24
(inc. VAT)
FREE delivery for orders over £50.00
- 252 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £2.60 | £5.20 |
10 - 98 | £2.535 | £5.07 |
100 - 498 | £2.465 | £4.93 |
500 + | £2.41 | £4.82 |
*price indicative
- RS Stock No.:
- 111-6464
- Mfr. Part No.:
- STF35N60DM2
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 28 A | |
Maximum Drain Source Voltage | 600 V | |
Series | MDmesh DM2 | |
Package Type | TO-220FP | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 110 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
Length | 10.4mm | |
Number of Elements per Chip | 1 | |
Width | 4.6mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Forward Diode Voltage | 1.6V | |
Minimum Operating Temperature | -55 °C | |
Height | 16.4mm | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 600 V | ||
Series MDmesh DM2 | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
Height 16.4mm | ||
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