STMicroelectronics MDmesh DM2 N-Channel MOSFET, 22 A, 650 V, 3-Pin TO-247 STW28N60DM2

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Subtotal (1 tube of 30 units)*

£71.34

(exc. VAT)

£85.62

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30£2.378£71.34
60 - 120£1.902£57.06
150 +£1.712£51.36

*price indicative

RS Stock No.:
168-5897
Mfr. Part No.:
STW28N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

MDmesh DM2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

39 nC @ 10 V

Length

15.75mm

Width

5.15mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

20.15mm

Forward Diode Voltage

1.6V

COO (Country of Origin):
CN

N-Channel MDmesh DM2 Series, STMicroelectronics


The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified


MOSFET Transistors, STMicroelectronics

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