STMicroelectronics MDmesh DM2 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP STF35N60DM2
- RS Stock No.:
- 168-5890
- Mfr. Part No.:
- STF35N60DM2
- Brand:
- STMicroelectronics
Subtotal (1 tube of 50 units)*
£125.40
(exc. VAT)
£150.50
(inc. VAT)
FREE delivery for orders over £50.00
- 250 unit(s) ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.508 | £125.40 |
| 100 - 450 | £2.443 | £122.15 |
| 500 + | £2.382 | £119.10 |
*price indicative
- RS Stock No.:
- 168-5890
- Mfr. Part No.:
- STF35N60DM2
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220FP | |
| Series | MDmesh DM2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 16.4mm | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Series MDmesh DM2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 16.4mm | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh DM2 Series, STMicroelectronics
AEC-Q101 qualified
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