STMicroelectronics STB37N60 SiC N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK STB37N60DM2AG

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£3,287.00

(exc. VAT)

£3,944.00

(inc. VAT)

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Per Reel*
1000 +£3.287£3,287.00

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RS Stock No.:
233-3038
Mfr. Part No.:
STB37N60DM2AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

STB37N60

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.094 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected

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