Vishay EF Series N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK SIHB28N60EF-GE3

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
177-7628
Mfr. Part No.:
SIHB28N60EF-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

80 nC @ 10 V

Length

10.67mm

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.83mm

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)


MOSFET Transistors, Vishay Semiconductor

Related links