Vishay EF N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK SiHB186N60EF-GE3

Subtotal (1 tube of 50 units)*

£49.85

(exc. VAT)

£59.80

(inc. VAT)

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50 +£0.997£49.85

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RS Stock No.:
210-4973
Mfr. Part No.:
SiHB186N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)

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