Vishay EF N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK SiHB186N60EF-GE3
- RS Stock No.:
- 210-4973
- Mfr. Part No.:
- SiHB186N60EF-GE3
- Brand:
- Vishay
Subtotal (1 tube of 50 units)*
£49.85
(exc. VAT)
£59.80
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 150 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.997 | £49.85 |
*price indicative
- RS Stock No.:
- 210-4973
- Mfr. Part No.:
- SiHB186N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | EF | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.168 Ω | |
| Maximum Gate Threshold Voltage | 3 → 5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.4 A | ||
Maximum Drain Source Voltage 600 V | ||
Series EF | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.168 Ω | ||
Maximum Gate Threshold Voltage 3 → 5V | ||
Number of Elements per Chip 1 | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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