Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3

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Subtotal (1 pack of 5 units)*

£15.50

(exc. VAT)

£18.60

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
5 - 45£3.10£15.50
50 - 120£2.79£13.95
125 - 245£2.48£12.40
250 - 495£2.264£11.32
500 +£1.95£9.75

*price indicative

Packaging Options:
RS Stock No.:
210-4975
Mfr. Part No.:
SiHB186N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

14.61mm

Width

9.65 mm

Height

4.06mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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