N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Brand:: Vishay

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

652 In stock - FREE next working day delivery available

Price Each (In a Pack of 2)

£1.83

(exc. VAT)

£2.20

(inc. VAT)

Units	Per unit	Per Pack*
2 +	£1.83	£3.66

*price indicative

RS Stock No.:: 903-4504
Mfr. Part No.:: SiHB28N60EF-GE3
Brand:: Vishay

SiHB28N60EF, EF Series Power MOSFET with Fast Body Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	28 A
Maximum Drain Source Voltage	600 V
Series	EF Series
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	123 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	250 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	80 nC @ 10 V
Number of Elements per Chip	1
Length	10.67mm
Maximum Operating Temperature	+150 °C
Width	9.65mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.83mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

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