STMicroelectronics MDmesh DM2 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

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£7.68

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£9.22

(inc. VAT)

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2 - 8£3.84£7.68
10 - 18£3.65£7.30
20 - 48£3.285£6.57
50 - 98£2.955£5.91
100 +£2.805£5.61

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Packaging Options:
RS Stock No.:
111-6482
Mfr. Part No.:
STW35N60DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

210 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

5.15mm

Transistor Material

Si

Length

15.75mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

20.15mm

Forward Diode Voltage

1.6V

Minimum Operating Temperature

-55 °C

N-Channel MDmesh DM2 Series, STMicroelectronics


The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified


MOSFET Transistors, STMicroelectronics

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