STMicroelectronics MDmesh DM2 N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2
- RS Stock No.:
- 168-5899
- Mfr. Part No.:
- STW35N60DM2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£93.87
(exc. VAT)
£112.65
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £3.129 | £93.87 |
| 60 - 120 | £3.048 | £91.44 |
| 150 + | £2.972 | £89.16 |
*price indicative
- RS Stock No.:
- 168-5899
- Mfr. Part No.:
- STW35N60DM2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Series | MDmesh DM2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 210 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.15mm | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Series MDmesh DM2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 210 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 15.75mm | ||
Width 5.15mm | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 20.15mm | ||
Forward Diode Voltage 1.6V | ||
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