STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK
- RS Stock No.:
- 233-3040
- Mfr. Part No.:
- STH12N120K5-2
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
£6,044.00
(exc. VAT)
£7,253.00
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 1,000 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £6.044 | £6,044.00 |
*price indicative
- RS Stock No.:
- 233-3040
- Mfr. Part No.:
- STH12N120K5-2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | STB37N60 | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series STB37N60 | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
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