STMicroelectronics MDmesh K5 N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2 ST2H8N120K5AG
- RS Stock No.:
- 814-401
- Mfr. Part No.:
- ST2H8N120K5AG
- Brand:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
£2,260.00
(exc. VAT)
£2,710.00
(inc. VAT)
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- Shipping from 20 October 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.26 | £2,260.00 |
*price indicative
- RS Stock No.:
- 814-401
- Mfr. Part No.:
- ST2H8N120K5AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | MDmesh K5 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.65Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 165W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.98mm | |
| Length | 10.98mm | |
| Height | 15.55mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series MDmesh K5 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.65Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 165W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.98mm | ||
Length 10.98mm | ||
Height 15.55mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.
Automotive-grade, AEC-Q101 qualified for enhanced reliability
Ultra-low gate charge and very low figure of merit for reduced power loss
1200 V maximum drain-source voltage with a maximum drain current of 6 A
Designed with Advanced MDmesh K5 technology for superior thermal performance