STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 6 A, 1200 V Enhancement Mode, 3-Pin H2PAK-2

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£3.43

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£4.12

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1 - 9£3.43
10 - 49£3.33
50 - 99£3.22
100 +£2.78

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RS Stock No.:
800-461
Mfr. Part No.:
STH8N120K5-2AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

1200V

Series

STH285N10F8-6AG

Package Type

H2PAK-2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.65mΩ

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

165W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

ECOPACK

Height

15.8mm

Width

4.7mm

Length

10.4mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

AEC-Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected