STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H
- RS Stock No.:
- 201-4415
- Mfr. Part No.:
- SCT20N120H
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
£8,735.00
(exc. VAT)
£10,482.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 26 June 2026
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Units | Per unit | Per Reel* |
---|---|---|
1000 + | £8.735 | £8,735.00 |
*price indicative
- RS Stock No.:
- 201-4415
- Mfr. Part No.:
- SCT20N120H
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | H2PAK-2 | |
Series | SiC MOSFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.203 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 239V | |
Number of Elements per Chip | 1 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type H2PAK-2 | ||
Series SiC MOSFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.203 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 239V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
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