STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

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Subtotal (1 reel of 1000 units)*

£8,735.00

(exc. VAT)

£10,482.00

(inc. VAT)

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Per Reel*
1000 +£8.735£8,735.00

*price indicative

RS Stock No.:
201-4415
Mfr. Part No.:
SCT20N120H
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Package Type

H2PAK-2

Series

SiC MOSFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.

Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance

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