STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2 SCT20N120H
- RS Stock No.:
- 201-4416
- Mfr. Part No.:
- SCT20N120H
- Brand:
- STMicroelectronics
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£11.09
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£13.31
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Units | Per unit |
|---|---|
| 1 - 49 | £11.09 |
| 50 - 99 | £8.60 |
| 100 - 249 | £7.83 |
| 250 - 499 | £7.64 |
| 500 + | £7.44 |
*price indicative
- RS Stock No.:
- 201-4416
- Mfr. Part No.:
- SCT20N120H
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | SiC MOSFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 203mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Width | 4.7 mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series SiC MOSFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 203mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Width 4.7 mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
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