N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

RS Stock No.:: 111-6459
Mfr. Part No.:: STB18N60DM2
Brand:: STMicroelectronics

N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2

Price Each (In a Pack of 5)

£2.11

(exc. VAT)

£2.53

(inc. VAT)

Available to back order for despatch 17/07/2025

Units	Per unit	Per Pack*
5 - 5	£2.11	£10.55
10 - 95	£1.796	£8.98
100 - 495	£1.408	£7.04
500 +	£1.186	£5.93

*price indicative

RS Stock No.:: 111-6459
Mfr. Part No.:: STB18N60DM2
Brand:: STMicroelectronics

Technical Reference

Legislation and Compliance

Product Details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	600 V
Package Type	D2PAK (TO-263)
Series	MDmesh DM2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	290 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	90 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Transistor Material	Si
Typical Gate Charge @ Vgs	20 nC @ 10 V
Length	9.35mm
Maximum Operating Temperature	+150 °C
Width	10.4mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.6V
Height	4.6mm