Silicon N-Channel MOSFET, 50 A, 650 V, 3-Pin TO 263 Infineon IPB60R040C7ATMA1
- RS Stock No.:
- 222-4650
- Mfr. Part No.:
- IPB60R040C7ATMA1
- Brand:
- Infineon
839 In stock - FREE next working day delivery available
Price Each (On a Reel of 1000)
£5.68
(exc. VAT)
£6.82
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £5.68 | £5,680.00 |
*price indicative
- RS Stock No.:
- 222-4650
- Mfr. Part No.:
- IPB60R040C7ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 650 V |
| Series | CoolMOS™ |
| Package Type | TO 263 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.04 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Transistor Material | Silicon |
| Number of Elements per Chip | 1 |
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