Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R190C7ATMA2

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Subtotal (1 pack of 5 units)*

£8.10

(exc. VAT)

£9.70

(inc. VAT)

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Per Pack*
5 - 20£1.62£8.10
25 - 45£1.36£6.80
50 - 120£1.28£6.40
125 - 245£1.184£5.92
250 +£1.102£5.51

*price indicative

Packaging Options:
RS Stock No.:
222-4658
Mfr. Part No.:
IPB65R190C7ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO 263

Series

CoolMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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