Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1

Subtotal (1 reel of 1000 units)*

£1,417.00

(exc. VAT)

£1,700.00

(inc. VAT)

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RS Stock No.:
222-4653
Mfr. Part No.:
IPB60R099P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Package Type

TO 263

Series

CoolMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package

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