Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1
- RS Stock No.:
- 222-4656
- Mfr. Part No.:
- IPB65R110CFDAATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.50
(exc. VAT)
£11.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.75 | £9.50 |
| 10 - 18 | £4.18 | £8.36 |
| 20 - 48 | £3.945 | £7.89 |
| 50 - 98 | £3.66 | £7.32 |
| 100 + | £3.375 | £6.75 |
*price indicative
- RS Stock No.:
- 222-4656
- Mfr. Part No.:
- IPB65R110CFDAATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31.2 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ | |
| Package Type | TO 263 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.11 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ | ||
Package Type TO 263 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.11 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Ultra fast body diode
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO 263 IPB65R190C7ATMA2
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO 263 IPB60R099P7ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin TO 263 IPB60R040C7ATMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 600 V, 3-Pin TO 263 IPB65R310CFDAATMA1
- Vishay Silicon N-Channel MOSFET 650 V, 3-Pin TO-220 SIHF074N65E-GE3
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R030M1HXKSA1