Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO 263 IPB65R110CFDAATMA1
- RS Stock No.:
- 222-4655
- Mfr. Part No.:
- IPB65R110CFDAATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,816.00
(exc. VAT)
£2,179.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £1.816 | £1,816.00 |
*price indicative
- RS Stock No.:
- 222-4655
- Mfr. Part No.:
- IPB65R110CFDAATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 31.2 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO 263 | |
Series | CoolMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.11 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO 263 | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.11 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
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