Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263 IPB60R099P7ATMA1

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Subtotal (1 pack of 5 units)*

£16.60

(exc. VAT)

£19.90

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5£3.32£16.60
10 - 20£3.154£15.77
25 - 45£2.89£14.45
50 - 120£2.49£12.45
125 +£2.158£10.79

*price indicative

Packaging Options:
RS Stock No.:
222-4654
Mfr. Part No.:
IPB60R099P7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns

Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on) /package

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