Infineon CoolMOS™ Silicon N-Channel MOSFET, 50 A, 650 V, 3-Pin TO 263 IPB60R040C7ATMA1

Bulk discount available

Subtotal (1 unit)*

£8.03

(exc. VAT)

£9.64

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 795 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£8.03
10 - 24£7.63
25 - 49£7.31
50 - 99£6.99
100 +£6.51

*price indicative

Packaging Options:
RS Stock No.:
222-4651
Mfr. Part No.:
IPB60R040C7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.04 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns
Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package

Related links