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Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

RS Stock No.:: 217-2506
Mfr. Part No.:: IPB65R095C7ATMA2
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2

Bulk discount available

Subtotal (1 pack of 5 units)*

£18.30

(exc. VAT)

£21.95

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

225 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	£3.66	£18.30
10 - 20	£3.33	£16.65
25 - 45	£3.112	£15.56
50 - 120	£2.892	£14.46
125 +	£2.672	£13.36

*price indicative

RS Stock No.:: 217-2506
Mfr. Part No.:: IPB65R095C7ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	129W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	10.31mm
	Height	4.57mm
	Width	9.45 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 129W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 10.31mm
	Height 4.57mm
	Width 9.45 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB65R095C7ATMA2

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Increased MOSFET dv/dt ruggedness

Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on)/package

Easy to use/drive

Pb-free plating, halogen free mold compound

Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)