Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

Subtotal (1 reel of 2500 units)*

£1,252.50

(exc. VAT)

£1,502.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.501£1,252.50

*price indicative

RS Stock No.:
222-4670
Mfr. Part No.:
IPD60R280CFD7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications

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