Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK Infineon IPD80R2K8CEATMA1
- RS Stock No.:
- 222-4675
- Mfr. Part No.:
- IPD80R2K8CEATMA1
- Brand:
- Infineon
Subtotal (1 pack of 15 units)**
£3.83
(exc. VAT)
£4.59
(inc. VAT)
6960 In stock - FREE next working day delivery available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
---|---|---|
15 + | £0.255 | £3.825 |
**price indicative
- RS Stock No.:
- 222-4675
- Mfr. Part No.:
- IPD80R2K8CEATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.9 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | TO-252 | |
Series | CoolMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.8 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.9V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-252 | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
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