Infineon CoolMOS™ Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK IPD80R2K8CEATMA1

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Subtotal (1 pack of 15 units)*

£9.735

(exc. VAT)

£11.685

(inc. VAT)

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15 - 60£0.649£9.74
75 - 135£0.616£9.24
150 - 360£0.59£8.85
375 - 735£0.565£8.48
750 +£0.525£7.88

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Packaging Options:
RS Stock No.:
222-4675
Mfr. Part No.:
IPD80R2K8CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

80 V

Package Type

TO-252

Series

CoolMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications

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