Infineon CoolMOS™ N-Channel MOSFET, 1.9 A, 800 V, 3-Pin SOT-223 IPN80R3K3P7ATMA1
- RS Stock No.:
- 215-2531
- Mfr. Part No.:
- IPN80R3K3P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£594.00
(exc. VAT)
£714.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 July 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.198 | £594.00 |
| 6000 + | £0.188 | £564.00 |
*price indicative
- RS Stock No.:
- 215-2531
- Mfr. Part No.:
- IPN80R3K3P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | SOT-223 | |
| Series | CoolMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type SOT-223 | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Best-in-class quality and reliability
Fully optimized portfolio
Related links
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