Infineon CoolMOS Type N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- RS Stock No.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£15.00
(exc. VAT)
£18.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.60 | £15.00 |
| 125 - 225 | £0.45 | £11.25 |
| 250 - 600 | £0.426 | £10.65 |
| 625 - 1225 | £0.397 | £9.93 |
| 1250 + | £0.366 | £9.15 |
*price indicative
- RS Stock No.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | SOT-223 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 6.3W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type SOT-223 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 6.3W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 700 V, 3-Pin IPAK IPSA70R1K2P7SAKMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R2K0P7SATMA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R450P7SATMA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R750P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R600P7SATMA1