Infineon CoolMOS™ Silicon N-Channel MOSFET, 9.4 A, 700 V, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- RS Stock No.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Save 39% when you buy 1250 units
Subtotal (1 pack of 25 units)*
£15.00
(exc. VAT)
£18.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.60 | £15.00 |
| 125 - 225 | £0.45 | £11.25 |
| 250 - 600 | £0.426 | £10.65 |
| 625 - 1225 | £0.397 | £9.93 |
| 1250 + | £0.366 | £9.15 |
*price indicative
- RS Stock No.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS™ | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 700 V, 3-Pin IPAK IPSA70R1K2P7SAKMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R2K0P7SATMA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R750P7SATMA1
- Infineon N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R450P7SATMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin SOT-223 IPN70R600P7SATMA1