Infineon CoolMOS™ N-Channel MOSFET, 4 A, 800 V, 3-Pin SOT-223 IPN95R2K0P7ATMA1

Subtotal (1 pack of 20 units)*

£11.06

(exc. VAT)

£13.28

(inc. VAT)

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  • 300 unit(s) ready to ship
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Units
Per unit
Per Pack*
20 +£0.553£11.06

*price indicative

Packaging Options:
RS Stock No.:
215-2534
Mfr. Part No.:
IPN95R2K0P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon 950V Cool MOS™ P7 series designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V Cool MOS™ C3, the 950V Cool MOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS™ P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class FOMRDS(on)*Eoss

reduced Qg, Ciss, and Coss
Best-in-class SOT-223 RDS(on)
Best-in-class Cool MOS™ quality and reliability
Fully optimized portfolio

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