Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1
- RS Stock No.:
- 214-9051
- Mfr. Part No.:
- IPD80R3K3P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£11.05
(exc. VAT)
£13.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.442 | £11.05 |
| 125 - 225 | £0.42 | £10.50 |
| 250 - 600 | £0.402 | £10.05 |
| 625 - 1225 | £0.385 | £9.63 |
| 1250 + | £0.358 | £8.95 |
*price indicative
- RS Stock No.:
- 214-9051
- Mfr. Part No.:
- IPD80R3K3P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 18W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 18W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.
It comes with Fully optimized portfolio
Integrated Zener Diode ESD protection
Related links
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