Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
- RS Stock No.:
- 130-0906
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£1.83
(exc. VAT)
£2.195
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,425 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.366 | £1.83 |
*price indicative
- RS Stock No.:
- 130-0906
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | DPAK (TO-252) | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 32 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Forward Diode Voltage | 0.9V | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type DPAK (TO-252) | ||
Series CoolMOS™ P7 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 32 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Forward Diode Voltage 0.9V | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
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