Infineon CoolMOS™ P7 N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK IPD80R1K4P7ATMA1
- RS Stock No.:
- 168-5917
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
£730.00
(exc. VAT)
£875.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | £0.292 | £730.00 |
| 5000 + | £0.277 | £692.50 |
*price indicative
- RS Stock No.:
- 168-5917
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | DPAK (TO-252) | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 32 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.41mm | |
| Forward Diode Voltage | 0.9V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type DPAK (TO-252) | ||
Series CoolMOS™ P7 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 32 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
Forward Diode Voltage 0.9V | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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