Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1
- RS Stock No.:
- 222-4673
- Mfr. Part No.:
- IPD60R280P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.00
(exc. VAT)
£13.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,720 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.10 | £11.00 |
| 50 - 90 | £1.045 | £10.45 |
| 100 - 240 | £1.001 | £10.01 |
| 250 - 490 | £0.957 | £9.57 |
| 500 + | £0.891 | £8.91 |
*price indicative
- RS Stock No.:
- 222-4673
- Mfr. Part No.:
- IPD60R280P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Related links
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 3-Pin DPAK IPD60R280P7ATMA1
- STMicroelectronics MDmesh M5 N-Channel MOSFET 650 V, 3-Pin DPAK STD16N65M5
- STMicroelectronics MDmesh M5 N-Channel MOSFET 650 V, 3-Pin TO-220FP STF16N65M5
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP18N65M2
- STMicroelectronics MDmesh M5 N-Channel MOSFET 650 V, 3-Pin TO-220 STP16N65M5
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH12N65X2
- onsemi SUPERFET III N-Channel MOSFET 650 V, 3-Pin TO-220F FCPF250N65S3L1-F154
- onsemi SUPERFET III N-Channel MOSFET 650 V, 3-Pin TO-220F FCPF250N65S3R0L-F154