N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK Infineon IPD33CN10NGATMA1
- RS Stock No.:
- 215-2506
- Mfr. Part No.:
- IPD33CN10NGATMA1
- Brand:
- Infineon
Subtotal (1 pack of 20 units)**
£4.96
(exc. VAT)
£5.96
(inc. VAT)
12280 In stock - FREE next working day delivery available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Pack** |
---|---|---|
20 + | £0.248 | £4.96 |
**price indicative
- RS Stock No.:
- 215-2506
- Mfr. Part No.:
- IPD33CN10NGATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 27 A | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ 2 | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.033 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.033 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
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